mini profet ? bsp 452 semiconductor group page 1 of 8 20.08.96 miniprofet high-side switch short-circuit protection input protection overtemperature protection with hysteresis overload protection overvoltage protection switching inductive load clamp of negative output voltage with inductive loads undervoltage shutdown maximum current internally limited e lectro s tatic d ischarge ( esd ) protection reverse battery protection 1 ) package: sot 223 type ordering code bsp 452 q67000-s271 application m c compatible power switch for 12 v dc grounded loads all types of resistive, inductive and capacitive loads replaces electromechanical relays and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input,monolithically integrated in smart sipmos a technology. fully protected by embedded protection functions. blockdiagramm: in 3 r in + v bb signal gnd esd mini-profet out gnd logic voltage sensor voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 load gnd load v logic overvoltage protection esd- diode 1 ) with resistor r gnd =150 w in gnd connection, resistor in series with in connections reverse load current limited by connected load. 1 2 3 4
mini profet ? bsp 452 semiconductor group page 2 20.08.96 pin symbol function 1 out o output to the load 2 gnd - logic ground 3 in i input, activates the power switch in case of logical high signal 4 vbb + positive power supply voltage maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage v bb 40 v load current self-limited i l i l ( sc ) a maximum input voltage 2 ) v in -5.0... v bb v maximum input current i in 5 ma inductive load switch-off energy dissipation, single pulse i l = 0.5a , t a = 150c (not tested, specified by design) e as 0.5 j load dump protection 3 ) v loaddump = u a + v s r l = 24 w r i =2 w , t d =400ms, in= low or high, u a =13,5v r l = 80 w (not tested, specified by design) v load dump 4 ) 60 80 v electrostatic discharge capability (esd) 5 ) pin 3 pin 1,2,4 v esd 1 2 kv operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c max. power dissipation (dc) 6 ) t a = 25 c p tot 1.8 w thermal resistance chip - soldering point: chip - ambient: 6) r thjs r thja 7 70 k/w 2 ) at v in > v bb , the input current is not allowed to exceed 5 ma. 3 ) supply voltages higher than v bb(az) require an external current limit for the gnd pin, e.g. with a 150 w resistor in the gnd connection a resistor for the protection of the input is integrated. 4 ) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 5 ) hbm according to mil-std 883d, methode 3015.7 6 ) bsp 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm 2 copper area for v bb connection
mini profet ? bsp 452 semiconductor group page 3 20.08.96 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 13.5v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 4 to 1) i l = 0.5 a, v in = high t j = 25c t j = 150c r on -- -- 0.16 -- 0.2 0.4 w nominal load current (pin 4 to 1) 7 ) iso standard: v on = v bb - v out = 0.5 v t s = 85 c i l(iso) 0.7 -- -- a turn-on time to 90% v out turn-off time to 10% v out r l = 24 w t on t off -- -- 60 60 100 150 m s slew rate on 10 to 30% v out , r l = 24 w d v /dt on -- 2 4 v/ m s slew rate off 70 to 40% v out , r l = 24 w -d v /dt off -- 2 4 v/ m s input allowable input voltage range, (pin 3 to 2) v in -3.0 -- v bb v input turn-on threshold voltage t j = -40...+150c v in(t+) -- -- 3.5 v input turn-off threshold voltage t j = -40...+150c v in(t-) 1.5 -- -- v input threshold hysteresis d v in(t) -- 0.5 -- v off state input current (pin 3) v in(off) = 1.2 v t j = -40...+150c i in(off) 10 -- 60 m a on state input current (pin 3) v in(on) = 3.0 v to v bb t j = -40...+150c i in(on) 10 -- 100 m a input resistance r in 1.5 2.8 3.5 k w 7 ) i l(iso) is limited by current limitation, see i l(sc)
mini profet ? bsp 452 semiconductor group page 4 20.08.96 parameter and conditions symbol values unit at t j = 25 c, v bb = 13.5v unless otherwise specified min typ max operating parameters operating voltage 8 ) t j = -40...+150c v bb(on) 5.0 -- 34 v undervoltage shutdown t j =-40...+150c v bb(under) 3.5 -- 5 v undervolta g e restart t j =-40...+25c t j =+150c v bb(u rst) -- -- 6.5 7.0 v undervolta g e restart of char g e pumpe see diagram page 7 v bb(ucp) -- 5.6 7 v undervoltage hysteresis d v bb(under) = v bb(u rst) - v bb(under) d v bb(under) -- 0.3 -- v overvoltage shutdown t j =-40...+150c v bb(over) 34 -- 42 v overvoltage restart t j =-40...+150c v bb(o rst) 33 -- -- v overvoltage hysteresis t j =-40...+150c d v bb(over) -- 0.7 -- v standby current (pin 4), v in = low t j =-40...+150c i bb(off) -- 10 25 m a operating current (pin 2), v in = 5 v i gnd -- 1 1.6 ma leakage current (pin 1) v in = low t j =-40...+25c t j =150c i l(off) -- 2 5 7 m a protection functions current limit (pin 4 to 1) t j = 25c v bb = 20v t j = -40...+150c i l(sc) 0.7 0.7 1.5 -- 2 2.4 a overvoltage protection i bb =4ma t j =-40...+150c v bb(az) 41 -- -- v output clamp (ind. load switch off) at v out = v bb - v on(cl) , i bb = 4ma v on(cl) 41 47 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k inductive load switch-off energy dissipation 9 ) t j start = 150 c, single pulse, i l = 0.5 a, v bb = 12 v (not tested, specified by design) e as -- -- 0.5 j reverse battery (pin 4 to 2) 10 ) (not tested, specified by design) - v bb -- -- 30 v 8 ) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 9 ) while demagnetizing load inductance, dissipated energy in profet is e as = v on(cl) * i l (t) dt, approx. e as = 1 / 2 * l * i 2 l * ( v on(cl) v on(cl) - v bb ) 10 ) requires 150 w resistor in gnd connection. reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
mini profet ? bsp 452 semiconductor group page 5 20.08.96 max. allowable power dissipation p tot = f (t a ,t sp ) p tot [w] 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 t a t sp t a, t sp [c] on state resistance (vbb-pin to out-pin) r on = f (tj); v bb = 13.5 v; i l = 0.5 a r on [ w ] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 150 98% t j [c] current limit characteristic i l(sc) = f (v on ); (v on see testcircuit) i l(sc) [a] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 02468101214 25c 150c -40c v on [v] typ. input current i in = f (v in ); v bb = 13,5 v i in [a] 0 5 10 15 20 25 30 35 40 45 50 02468101214 -40c +150c +25c v in [v]
mini profet ? bsp 452 semiconductor group page 6 20.08.96 typ. operating current i gnd = f (t j ); v bb = 13,5 v; v in = high i gnd [ma] 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 t j [c] typ. standby current i bb(off) = f (t j ); v bb = 13,5 v; v in = low i bb(off) [a] 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 t j [c] typ. overload current i l(lim) = f (t); v bb = 13,5 v, no heatsink, param.: t jstart i l(lim) [a] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 200 250 300 350 400 -40c +150c +25c t [ms] short circuit current i l(sc) = f (t j ); v bb = 13,5 v i l(sc) [a] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 t j [c]
mini profet ? bsp 452 semiconductor group page 7 20.08.96 typ. input turn on voltage threshold v in(t+) = f (t j ); v in(t+) [v] 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 13v t j [c] typ. on-state resistance (vbb-pin to out-pin) r on = f (v bb ,i l) ; i l =0.5a, t j = 25c r on [m w ] 0 50 100 150 200 250 300 0 5 10 15 20 25 v bb [v] figure 6: undervoltage restart of charge pumpe v on [v] v bb(under) v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) v bb [v] charge pump starts at v bb(ucp) about 7 v typ. test circuit
mini profet ? bsp 452 semiconductor group page 8 20.08.96 package: all dimensions in mm. sot 223/4: published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for application s, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for an y costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1) of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2) with the express written approval of the semiconductor group of siemens ag. 1) a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2) life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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